The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2023

Filed:

Apr. 19, 2018
Applicants:

Sumitomo Chemical Company, Limited, Tokyo, JP;

Hosei University, Tokyo, JP;

Inventors:

Fumimasa Horikiri, Hitachi, JP;

Takehiro Yoshida, Hitachi, JP;

Tomoyoshi Mishima, Tokyo, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); C30B 25/20 (2006.01); C30B 29/38 (2006.01); C30B 31/22 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/20 (2013.01); C30B 25/20 (2013.01); C30B 29/38 (2013.01); C30B 31/22 (2013.01); H01L 21/265 (2013.01);
Abstract

Provided is a crystal laminate including: a crystal substrate formed from a monocrystal of group III nitride expressed by a compositional formula InAlGaN (where 0≤x≤1, 0≤y≤1, 0≤x+y≤1), the crystal substrate containing at least any one of n-type impurity selected from the group consisting of Si, Ge, and O; and a crystal layer formed by a group III nitride crystal epitaxially grown on a main surface of the crystal substrate, at least any one of p-type impurity selected from the group consisting of C, Mg, Fe, Be, Zn, V, and Sb being ion-implanted in the crystal layer. The crystal laminate is configured in a manner such that an absorption coefficient of the crystal substrate for light with a wavelength of 2000 nm when the crystal substrate is irradiated with the light falls within a range of 1.8 cmor more and 4.6 cmor less under a temperature condition of normal temperature.


Find Patent Forward Citations

Loading…