The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Sep. 26, 2007
Tomoyoshi Mishima, Shiki, JP;
Toru Nakamura, Mitaka, JP;
Masataka Sato, Sagamihara, JP;
Kazutaka Nomoto, Minamiashigara, JP;
Tomoyoshi Mishima, Shiki, JP;
Toru Nakamura, Mitaka, JP;
Masataka Sato, Sagamihara, JP;
Kazutaka Nomoto, Minamiashigara, JP;
Hitachi Cable, Ltd., Tokyo, JP;
Abstract
A field-effect transistor is composed of a substrate, an electron transport layer and an electron supply layer formed sequentially on the substrate, wherein the electron transport layer and the electron supply layer are formed of a nitride semiconductor, a gate electrode, a source electrode and a drain electrode formed on the electron supply layer; and two high impurity concentration regions located in a depth direction directly below the source electrode and the drain electrode, respectively, the two high impurity concentration regions being formed to sandwich a two-dimensional electron gas layer formed between the electron transport layer and the electron supply layer. The two high impurity concentration regions each have a higher impurity concentration than the electron transport layer and the electron supply layer located directly below the gate electrode.