Masataka Sato

Title: Masataka Sato: Innovator in Field-Effect Transistor Technology

Introduction

Masataka Sato is a prominent inventor based in Sagamihara, Japan. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of field-effect transistors. His innovative work has led to advancements that are crucial for modern electronic devices.

Latest Patents

Masataka Sato holds a patent for a field-effect transistor and the method of making it. This invention involves a structure composed of a substrate, an electron transport layer, and an electron supply layer formed sequentially on the substrate. The design includes a gate electrode, a source electrode, and a drain electrode, along with two high impurity concentration regions located directly below the source and drain electrodes. These regions sandwich a two-dimensional electron gas layer, enhancing the performance of the transistor.

Career Highlights

Sato is currently employed at Hitachi Cable, Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing efficient and reliable electronic components that are widely used in various applications.

Collaborations

Throughout his career, Masataka Sato has collaborated with notable colleagues, including Tomoyoshi Mishima and Toru Nakamura. These partnerships have fostered a creative environment that has led to groundbreaking innovations in the field.

Conclusion

Masataka Sato's contributions to the field of field-effect transistors exemplify the spirit of innovation in semiconductor technology. His work not only advances the industry but also paves the way for future developments in electronics.