The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Oct. 29, 2013
Hitachi Metals, Ltd., Tokyo, JP;
Akihisa Terano, Tokyo, JP;
Kazuhiro Mochizuki, Tokyo, JP;
Tomonobu Tsuchiya, Tokyo, JP;
Tadayoshi Tsuchiya, Tokyo, JP;
Naoki Kaneda, Tokyo, JP;
Tomoyoshi Mishima, Tokyo, JP;
Hitachi Metals, Ltd., Tokyo, JP;
Abstract
A nitride semiconductor element having a high reverse breakdown voltage and a method of manufacturing the same are provided. A diode (a vertical-type SBD) has an n-type nitride semiconductor layer (a drift region) formed on an n-type nitride semiconductor substrate, a p-type nitride semiconductor layer formed on the n-type nitride semiconductor layer, and besides, an anode electrode formed on the p-type nitride semiconductor layer. The p-type nitride semiconductor layer has a relatively-thin first portion and a relatively-thick second portion provided so as to surround the first portion as being in contact with an outer circumference of the first portion. Also, the relatively-thin first portion of the p-type nitride semiconductor layer is formed thinner than the second portion so as to be depleted. The relatively-thick second portion of the p-type nitride semiconductor layer forms a guard ring part.