The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Mar. 21, 2012
Applicants:
Tadayoshi Tsuchiya, Ishioka, JP;
Naoki Kaneda, Tsuchiura, JP;
Tomoyoshi Mishima, Shiki, JP;
Inventors:
Assignee:
Hitachi Metals, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0256 (2006.01); H01L 33/00 (2010.01); H01L 29/20 (2006.01); H01L 29/30 (2006.01); H01L 29/861 (2006.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 29/861 (2013.01); H01L 33/0004 (2013.01); H01L 33/32 (2013.01); H01L 29/2003 (2013.01);
Abstract
A gallium nitride rectifying device includes a p-type gallium nitride based semiconductor layer and an n-type gallium nitride based semiconductor layer, the two layers forming a pn junction with each other. The p-type gallium nitride based semiconductor layer has a carrier trap (level) density of not more than 1×10cm, or the n-type gallium nitride based semiconductor layer has a carrier trap (level) density of not more than 1×10cm.