The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Aug. 23, 2016
Hosei University, Tokyo, JP;
Sciocs Company Limited, Hitachi-shi, Ibaraki, JP;
Sumitomo Chemical Company, Limited, Tokyo, JP;
Tohru Nakamura, Koganei, JP;
Tomoyoshi Mishima, Koganei, JP;
Hiroshi Ohta, Koganei, JP;
Yasuhiro Yamamoto, Koganei, JP;
Fumimasa Horikiri, Hitachi, JP;
HOSEI UNIVERSITY, Tokyo, JP;
SCIOCS COMPANY LIMITED, Hitachi-Shi, Ibaraki, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Abstract
There is provided a semiconductor device, including: a semiconductor member having a mesa structure in which a second semiconductor layer having one of a p-type conductivity type and an n-type conductivity type is laminated on a first semiconductor layer having the other one of the p-type conductivity type and the n-type conductivity type, so that the second semiconductor layer is exposed on an upper surface of the mesa structure, a pn junction interface is exposed on a side surface of the mesa structure, and the first semiconductor layer is exposed on an outside upper surface of the mesa structure; an insulating film disposed on a side surface of the mesa structure and on an outside upper surface of the mesa structure; a first electrode electrically connected to the second semiconductor layer on the upper surface of the mesa structure, and extends on the side surface of the mesa structure and on the outside upper surface of the mesa structure on the insulating film; and a second electrode electrically connected to the first semiconductor layer on a lower surface of the first semiconductor layer, wherein the insulating film is constituted including a first insulating layer and a second insulating layer, the first insulating layer is disposed so as to cover a corner portion where the side surface of the mesa structure and the outside upper surface of the mesa structure are connected to each other, the second insulating layer is disposed so as to cover the pn junction interface exposed on the side surface of the mesa structure, or is disposed to constitute an entire thickness of the insulating film directly under the electrode end of the first electrode so as to cover the area directly under the electrode end, the relative dielectric constant of the second insulating layer is equal to or larger than the relative dielectric constant of the semiconductor member, and the relative dielectric constant of the first insulating layer is smaller than the relative dielectric constant of the second insulating layer.