The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
May. 06, 2019
Hosei University, Tokyo, JP;
Sciocs Company Limited, Ibaraki, JP;
Sumitomo Chemical Company, Limited, Tokyo, JP;
Tomoyoshi Mishima, Tokyo, JP;
Hiroshi Ohta, Tokyo, JP;
Fumimasa Horikiri, Ibaraki, JP;
Masatomo Shibata, Ibaraki, JP;
HOSEI UNIVERSITY, Tokyo, JP;
SCIOCS COMPANY LIMITED, Ibaraki, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Abstract
There is provided a gallium nitride laminated substrate including: an n-type gallium nitride layer containing an n-type impurity; a p-type gallium nitride layer provided on the n-type gallium nitride layer, containing a p-type impurity, forming a pn-junction at an interface with the n-type gallium nitride layer, and having a p-type impurity concentration and a thickness such that, when a reverse bias voltage is applied to the pn-junction, a breakdown occurs due to a punchthrough phenomenon before occurrence of a breakdown due to an avalanche phenomenon; and an intermediate level layer provided on the p-type gallium nitride layer, containing a p-type gallium nitride which contains the p-type impurity at a higher concentration than the p-type gallium nitride layer, having at least one or more intermediate levels between a valence band and a conduction band, and configured to suppress an overcurrent resulting from a breakdown due to the punchthrough phenomenon in the p-type gallium nitride layer.