The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Feb. 28, 2018
Sciocs Company Limited, Ibaraki, JP;
Sumitomo Chemical Company, Limited, Tokyo, JP;
Takehiro Yoshida, Ibaraki, JP;
Fumimasa Horikiri, Ibaraki, JP;
SCIOCS COMPANY LIMITED, Ibaraki, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Abstract
A nitride semiconductor substrate is manufactured by a method which includes growing nitride semiconductor crystal along a c-axis direction on a +C-plane of a seed crystal substrate formed of nitride semiconductor crystal to form an n-type first nitride semiconductor layer; growing the nitride semiconductor crystal along the c-axis direction on the +C-plane of the first nitride semiconductor layer to form a second nitride semiconductor layer; and removing the seed crystal substrate and exposing a −C-plane of the first nitride semiconductor layer to obtain as a semiconductor substrate a laminate of the first nitride semiconductor layer and the second nitride semiconductor layer, with the −C plane as a main surface.