The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Feb. 28, 2019
Applicants:
Sciocs Company Limited, Ibaraki, JP;
Sumitomo Chemical Company, Limited, Tokyo, JP;
Inventor:
Fumimasa Horikiri, Ibaraki, JP;
Assignees:
SCIOCS COMPANY LIMITED, Ibaraki, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0256 (2006.01); H01L 29/20 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/302 (2006.01); H01L 33/00 (2010.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02491 (2013.01); H01L 21/02658 (2013.01); H01L 21/302 (2013.01); H01L 29/0634 (2013.01); H01L 29/0657 (2013.01); H01L 33/0025 (2013.01); H01L 29/0619 (2013.01); H01L 29/7827 (2013.01); H01L 29/8613 (2013.01); H01L 29/872 (2013.01);
Abstract
This invention provides a novel structure formed from GaN material using PEC etching. The structure comprises a member constituted by a single crystal of gallium nitride and the member includes a recess having an aspect ratio of 5 or more.