The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Dec. 18, 2018
Sciocs Company Limited, Ibaraki, JP;
Sumitomo Chemical Company, Limited, Tokyo, JP;
Takehiro Yoshida, Ibaraki, JP;
Hajime Fujikura, Ibaraki, JP;
Masatomo Shibata, Ibaraki, JP;
Fumimasa Horikiri, Ibaraki, JP;
SCIOCS COMPANY LIMITED, Ibaraki, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Abstract
To provide a technique of increasing a radius of curvature of (0001) plane, and narrowing an off-angle distribution, there is provided a nitride semiconductor substrate containing a group III nitride semiconductor crystal and having a main surface in which a nearest low index crystal plane is (0001) plane, wherein (0001) plane in one of a direction along <1-100> axis and a direction along <11-20> axis orthogonal to the <1-100> axis, is curved in a concave spherical shape with respect to the main surface, and a radius of curvature of the (0001) plane in one of the direction along the <1-100> axis and the direction along the <11-20> axis orthogonal to the <1-100> axis is different from a radius of curvature of at least a part of the (0001) plane in the other direction.