The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Apr. 14, 2014
Sumitomo Chemical Company, Limited, Tokyo, JP;
Masatomo Shibata, Hitachi, JP;
Takehiro Yoshida, Hitachi, JP;
Takayuki Suzuki, Hitachi, JP;
Yukio Abe, Hitachi, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Abstract
A nitride semiconductor single crystal substrate manufacturing method includes providing a template that a first nitride semiconductor single crystal layer is hetero-epitaxially grown on a heterogeneous substrate, forming a plurality of linear grooves on a surface of the template that have a depth reaching an inside of the heterogeneous substrate, wherein a pattern of the plurality of the linear grooves has three-fold or six-fold rotational symmetry with respect to a central axis of the template, epitaxially growing a second nitride semiconductor single crystal layer on the template with the plurality of the linear grooves formed thereon, and cutting a nitride semiconductor single crystal substrate from the second nitride semiconductor single crystal layer.