The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2020
Filed:
Mar. 01, 2017
Applicants:
Sciocs Company Limited, Ibaraki, JP;
Sumitomo Chemical Company, Limited, Tokyo, JP;
Inventors:
Takehiro Yoshida, Ibaraki, JP;
Masatomo Shibata, Ibaraki, JP;
Assignees:
SCIOCS COMPANY LIMITED, Ibaraki, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 9/00 (2006.01); C01B 21/06 (2006.01); C30B 29/40 (2006.01); C30B 25/20 (2006.01); C23C 16/34 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C01B 21/0632 (2013.01); C23C 16/34 (2013.01); C30B 25/20 (2013.01); C30B 29/406 (2013.01); H01L 29/2003 (2013.01); C01P 2002/82 (2013.01); C01P 2004/02 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02428 (2013.01);
Abstract
There is provided a nitride crystal substrate made of a nitride crystal with a diameter of 100 mm or more, having on its main surface: a continuous high dislocation density region and a plurality of low dislocation density regions divided by the high dislocation density region, with the main surface not including a polarity inversion domain.