The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Jan. 04, 2017
Osaka University, Suita-shi, Osaka, JP;
Sciocs Company Limited, Hitachi-shi, Ibaraki, JP;
Sumitomo Chemical Company, Limited, Tokyo, JP;
Yusuke Mori, Suita, JP;
Masashi Yoshimura, Suita, JP;
Mamoru Imade, Suita, JP;
Masayuki Imanishi, Suita, JP;
Masatomo Shibata, Hitachi, JP;
Takehiro Yoshida, Hitachi, JP;
Osaka University, Suita-shi, Osaka, JP;
Sciocs Company Limited, Hitachi-shi, JP;
Sumitomo Chemical Company, Limited, Tokyo, JP;
Abstract
There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth.