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Masayuki Imanishi

USPTO Granted Patents = 19 (Patent Applications = 7)

Average Co-Inventor Count = 5.7

ph-index = 3

Forward Citations = 30(Granted Patents)

Location History:

Suita, JP (2017 - 2021)
Osaka, JP (1997 - 2024)

Company Filing History:

Panasonic Holdings Corporation

patents

3 out of 16,453

Panasonic Corporation

Tokyo Electron Limited

Sciocs Company Limited

patents

8. 1 out of 6,896

Sumitomo Chemical Company, Limited

patents

where one patent can have more than one assignee

Years Active: 1997-2024

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19 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12094710 - Method of forming nitride semiconductor film (2024-09-17),

2. 12049710 - Group-III nitride substrate (2024-07-30),

3. 11879184 - Manufacturing apparatus for a group-III nitride crystal comprising a raw material chamber and a nurturing chamber in which a group III-element oxide gas and a nitrogen element-containing gas react to produce a group-III nitride crystal on a seed substrate (2024-01-23),

4. 11859311 - Manufacturing method for a group-III nitride crystal that requires a flow amount of a carrier gas supplied into a raw material chamber at a temperature increase step satisfies two relational equations (I) and (II) (2024-01-02),

5. 11795573 - Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrate (2023-10-24),

6. 11753739 - Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containng gas at a supersation ratio of greater than 1 and equal to or less than 5 (2023-09-12),

7. 11713517 - Group-III nitride substrate (2023-08-01),

8. 11713516 - Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal (2023-08-01),

9. 11624128 - Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal (2023-04-11),

10. 11396716 - Group-III nitride substrate containing carbon at a surface region thereof (2022-07-26),

11. 11377757 - Method for producing group III nitride crystal and seed substrate (2022-07-05),

12. 11220759 - Method of manufacturing a group III-nitride crystal comprising a nucleation step, a pyramid growth step, a lateral growth step, and a flat thick film growth step (2022-01-11),

13. 11155931 - Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containing gas at a supersaturation ratio of greater than 1 and equal to or less than 5 (2021-10-26),

14. 10927476 - Production method for group III nitride crystal (2021-02-23),

15. 10910511 - Manufacturing method of III-V compound crystal and manufacturing method of semiconductor device (2021-02-02),

Title: The Innovative Journey of Masayuki Imanishi

Introduction: Masayuki Imanishi is a pioneering inventor hailing from Osaka, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Masayuki Imanishi holds several recent patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Masayuki Imanishi has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant technological breakthroughs. His innovative spirit and dedication to his craft have earned him recognition as a trailblazer in the industry.

Collaborations: Throughout his career, Masayuki Imanishi has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing. His collaborative efforts have resulted in the development of cutting-edge technologies that have the potential to shape the future of various industries.

Conclusion: Masayuki Imanishi's relentless pursuit of innovation and his passion for creating technology that makes a difference have solidified his position as a respected figure in the world of inventors. His contributions continue to inspire the next generation of innovators to push the boundaries of what is possible in the realm of technology.

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