The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Mar. 31, 2021
Tokyo Electron Limited, Tokyo, JP;
Osaka University, Osaka, JP;
Nobuaki Takahashi, Tokyo, JP;
Hitoshi Miura, Tokyo, JP;
Koji Neishi, Nirasaki, JP;
Ryuji Katayama, Osaka, JP;
Yusuke Mori, Osaka, JP;
Masayuki Imanishi, Osaka, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
OSAKA UNIVERSITY, Osaka, JP;
Abstract
The method of forming a nitride semiconductor film includes intermittently sputtering a target of gallium nitride inside a vacuum chamber containing nitrogen and argon, and depositing sputtered particles of the gallium nitride that are scattered from the target inside the vacuum chamber, on a substrate having a temperature of 560 degrees C. or higher and 650 degrees C. or lower. A ratio of a flow rate of the nitrogen to a sum of the flow rate of the nitrogen and a flow rate of the argon supplied to the vacuum chamber is 6% or higher and 18% or lower.