Hitoshi Miura

Title: Hitoshi Miura: Innovator in Nitride Semiconductor Technology

Introduction

Hitoshi Miura is a prominent inventor based in Tokyo, Japan. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of nitride semiconductor films. His innovative methods have paved the way for advancements in various electronic applications.

Latest Patents

Hitoshi Miura holds a patent for a method of forming a nitride semiconductor film. This method involves intermittently sputtering a target of gallium nitride inside a vacuum chamber filled with nitrogen and argon. The sputtered particles of gallium nitride are deposited on a substrate maintained at a temperature between 560 degrees Celsius and 650 degrees Celsius. The process ensures that the ratio of the nitrogen flow rate to the total flow rate of nitrogen and argon is maintained between 6% and 18%.

Career Highlights

Throughout his career, Hitoshi Miura has worked with notable organizations, including Tokyo Electron Limited and Osaka University. His experience in these institutions has allowed him to refine his expertise in semiconductor technology and contribute to groundbreaking research.

Collaborations

Hitoshi Miura has collaborated with esteemed colleagues such as Nobuaki Takahashi and Koji Neishi. These partnerships have fostered an environment of innovation and have led to significant advancements in their respective fields.

Conclusion

Hitoshi Miura's work in nitride semiconductor technology exemplifies the impact of innovative thinking in the electronics industry. His contributions continue to influence the development of advanced semiconductor materials and processes.