Tokyo Electron Limited

Osaka University

Hitoshi Miura

Nobuaki Takahashi

Yusuke Mori

Masayuki Imanishi

Koji Neishi

Ryuji Katayama

The method of forming a nitride semiconductor film includes intermittently sputtering a target of gallium nitride inside a vacuum chamber containing nitrogen and argon, and depositing sputtered particles of the gallium nitride that are scattered from the target inside the vacuum chamber, on a substrate having a temperature of 560 degrees C. or higher and 650 degrees C. or lower. A ratio of a flow rate of the nitrogen to a sum of the flow rate of the nitrogen and a flow rate of the argon supplied to the vacuum chamber is 6% or higher and 18% or lower.

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Tokyo, Japan

Hitoshi Miura