Suita, Japan

Ryuji Katayama

USPTO Granted Patents = 3 

Average Co-Inventor Count = 5.3

ph-index = 1


Company Filing History:


Years Active: 2023-2024

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3 patents (USPTO):Explore Patents

Title: Innovations by Ryuji Katayama: Pioneering Advances in Nitride Semiconductors

Introduction: Ryuji Katayama, an esteemed inventor based in Suita, Japan, has contributed significantly to the field of semiconductor technology. With a portfolio boasting three patents, Katayama's work revolves around the formation and application of nitride semiconductor films, which are vital in the development of optical and semiconductor devices.

Latest Patents: Among his notable innovations, Katayama is credited with a groundbreaking patent regarding the "Method of forming a nitride semiconductor film." This method outlines a process where gallium nitride is intermittently sputtered inside a vacuum chamber, combined with a controlled mix of nitrogen and argon. The resulting particles are deposited on a substrate maintained at a specific temperature, optimizing the quality of nitride films used in various applications.

Another significant patent is for the "Nitride crystal, optical device, semiconductor device, and method for manufacturing nitride crystal." This invention presents a unique nitride crystal structure with varying oxygen and carbon concentrations across different crystal regions, enhancing the performance of semiconductor devices.

Career Highlights: Ryuji Katayama has built a remarkable career through his affiliations with prominent institutions. His work at Osaka University has allowed him to engage in advanced research, while his time at Toshiba Corporation has further solidified his standing in the semiconductor industry.

Collaborations: Throughout his career, Katayama has collaborated with notable peers in his field, including Toshiki Hikosaka and Shinya Nunoue. These collaborations have fostered an environment of innovation and propelled advancements in semiconductor technology.

Conclusion: Ryuji Katayama stands as a significant figure in the evolution of nitride semiconductor technology. His remarkable patents and collaborative efforts underscore his contributions to the field, promising continued advancements in optical and semiconductor devices.

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