The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

Jan. 05, 2021
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Osaka University, Suita, JP;

Inventors:

Toshiki Hikosaka, Kawasaki, JP;

Shinya Nunoue, Ichikawa, JP;

Tomoyuki Tanikawa, Suita, JP;

Ryuji Katayama, Suita, JP;

Masahiro Uemukai, Suita, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/02 (2006.01); C23C 16/30 (2006.01); G02F 1/355 (2006.01); G02F 1/37 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); C23C 16/303 (2013.01); G02F 1/3551 (2013.01); G02F 1/37 (2013.01); H01L 21/0254 (2013.01); H01L 21/02389 (2013.01); H01L 21/02458 (2013.01);
Abstract

According to one embodiment, a nitride crystal includes first, second, and third nitride crystal regions. The third nitride crystal region includes Al, and is provided between the first and second nitride crystal regions. A third oxygen concentration in the third nitride crystal region is greater than a first oxygen concentration in the first nitride crystal region and greater than a second oxygen concentration in the second nitride crystal region. A third carbon concentration in the third nitride crystal region is greater than a first carbon concentration in the first nitride crystal region and greater than a second carbon concentration in the second nitride crystal region. A <0001> direction of the first nitride crystal region is one of a first orientation from the second nitride crystal region toward the first nitride crystal region or a second orientation from the first nitride crystal region toward the second nitride crystal region.


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