Kanagawa, Japan

Toshiki Hikosaka

This inventor holds 99 USPTO granted patents and 28 published patent applications and 9 EPO patents, primarily in Nitride Semiconductors (CPC class H01L29-2003). Top assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation, Osaka University. Active years: 2012-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshiki Hikosaka. Retrieved from https://idiyas.com/inventor/toshiki-hikosaka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 99 

% Patents Active = 85.9

 

Average Co-Inventor Count = 4.1

ph-index = 6

Forward Citations = 115(Granted Patents)

Forward Citations (Not Self Cited) = 89(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Kanagawa, JP (2012 - 2013)
  • Tokyo, JP (2013 - 2016)
  • Kanagawa-ken, JP (2012 - 2018)
  • Kawasaki, JP (2015 - 2024)

Company Filing History:


Years Active: 2012-2026

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Areas of Expertise:
Nitride Semiconductor
Semiconductor Device
Wafer Manufacturing
Optical Device
Multi-Porition Nitride Region
Nitride Crystal
Light-Emitting Device
P-Type Impurity
Semiconductor Layer
Thermal Management
TSV Interconnects
Semiconductor Element
99 patents (USPTO):Explore Patents

Title: The Innovative Journey of Toshiki Hikosaka

Introduction: Toshiki Hikosaka, a prolific inventor based in Kanagawa-ken, Japan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 90 patents, Hikosaka's work focuses on advancements in nitride semiconductors, demonstrating his expertise and innovative capabilities in this critical area of research.

Latest Patents: Among Hikosaka's notable patents are his recent inventions related to nitride semiconductors and semiconductor devices. One of his latest patents describes a nitride semiconductor that comprises a base body, a nitride member, and an intermediate region situated between the two. The nitride member features a first nitride region containing AlGaN, while a second nitride region with specific properties is positioned adjacent to it. This intricate design incorporates a specified concentration of carbon within the intermediate region, enhancing the semiconductor's performance.

Additionally, his patent for a semiconductor device outlines a sophisticated structure that includes multiple electrodes and semiconductor layers. The layered configuration allows for improved electrical connections and functionality, reflecting Hikosaka's innovative approach to semiconductor design.

Career Highlights: Hikosaka's career includes valuable experiences at Kabushiki Kaisha Toshiba and Toshiba Electronic Devices & Storage Corporation. His tenure at these companies has allowed him to not only hone his technical skills but also to contribute significantly to the evolution of semiconductor technology. His inventions have paved the way for advancements that impact various electronic applications.

Collaborations: Throughout his career, Hikosaka has collaborated with several esteemed colleagues, including Shinya Nunoue and Hajime Nago. These partnerships have facilitated the exchange of ideas and fostered a collaborative environment that has driven innovation in the field.

Conclusion: Toshiki Hikosaka's journey as an inventor exemplifies the spirit of innovation in semiconductor technology. With a substantial number of patents to his name and continuous advancements in nitride semiconductors, Hikosaka remains a key figure in driving progress within the industry. His work not only highlights his inventive prowess but also sets the stage for future developments in semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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