The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2026

Filed:

Aug. 15, 2022
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Jumpei Tajima, Mitaka, JP;

Yosuke Kajiwara, Yokohama, JP;

PO-Chin Huang, Bunkyo, JP;

Toshiki Hikosaka, Kawasaki, JP;

Masahiko Kuraguchi, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H01L 21/02 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H10D 30/01 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H01L 21/0214 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H10D 30/015 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01); H10D 64/111 (2025.01);
Abstract

According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor regions, and a first member. The second electrode includes first and second electrode regions. A position of the third electrode is between a position of the first electrode and a position of the second electrode. The first semiconductor region includes first to fifth partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial region. The second semiconductor region includes first to third semiconductor portions. At least a part of the third semiconductor portion is between the first semiconductor region and the second electrode region. The second semiconductor portion is between the first semiconductor portion and the third semiconductor region. The first member includes first and second regions.


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