Po-Chin Huang

Title: Po-Chin Huang: Innovator in Semiconductor Technology

Introduction

Po-Chin Huang is a notable inventor based in Bunkyo, Japan. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to device design.

Latest Patents

Huang's latest patents include a semiconductor device that features first to third electrodes, a semiconductor member, a first conductive member, first and second insulating members, and a first nitride member. In this design, the position of the third electrode is strategically placed between the first and second electrodes. The semiconductor member consists of first and second semiconductor regions, with the first region containing five partial regions and the second region comprising two semiconductor portions.

Another patent focuses on a semiconductor device that includes first to third electrodes, a semiconductor member, first and second insulating members, a compound member, and a nitride member. In this configuration, the third electrode is positioned between the first and second electrodes. The semiconductor member again includes first and second semiconductor regions, with the first region containing five partial regions and the second region having two semiconductor portions.

Career Highlights

Po-Chin Huang is currently employed at Kabushiki Kaisha Toshiba, where he continues to advance semiconductor technology. His work has been instrumental in developing devices that enhance performance and efficiency in electronic applications.

Collaborations

Huang has collaborated with notable colleagues, including Daimotsu Kato and Hiroshi Ono, contributing to a dynamic research environment that fosters innovation.

Conclusion

Po-Chin Huang's contributions to semiconductor technology through his patents reflect his expertise and commitment to innovation. His work at Toshiba and collaborations with esteemed colleagues further highlight his impact in the field.