The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Mar. 01, 2022
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Daimotsu Kato, Kawasaki, JP;

Yosuke Kajiwara, Yokohama, JP;

Hiroshi Ono, Setagaya, JP;

Aya Shindome, Yokohama, JP;

Akira Mukai, Kawasaki, JP;

Po-Chin Huang, Bunkyo, JP;

Masahiko Kuraguchi, Yokohama, JP;

Tatsuo Shimizu, Shinagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/072 (2012.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01); H01L 31/109 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 29/2003 (2013.01); H01L 29/2006 (2013.01); H01L 29/205 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first conductive member, first and second insulating members, and a first nitride member. A position of the third electrode in a first direction from the first to second electrodes is between positions of the first and second electrodes in the first direction. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions. The second semiconductor portion includes first and second portions, and a third portion between the first and second portions. The first conductive member includes first and second conductive regions. The first insulating member includes a first insulating region. The second insulating member includes first and second insulating portions. The first nitride member includes a first nitride region.


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