The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2024
Filed:
Feb. 10, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Toshiki Hikosaka, Kawasaki, JP;
Hajime Nago, Yokohama, JP;
Jumpei Tajima, Mitaka, JP;
Shinya Nunoue, Ichikawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
According to one embodiment, a nitride semiconductor includes a base body, a nitride member, and an intermediate region provided between the base body and the nitride member. The nitride member includes a first nitride region including AlGaN (0<x1≤1), and a second nitride region including AlGaN (0≤x2<1, x2<x1). The first nitride region is between the intermediate region and the second nitride region. The intermediate region includes nitrogen and carbon. A concentration of carbon in the intermediate region is not less than 1.5×10/cmand not more than 6×10/cm.