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Kanagawa-ken, Japan

Hajime Nago

USPTO Granted Patents = 59 (Patent Applications = 18)

EPO Patents = 4 (Patent Applications = 9)

Average Co-Inventor Count = 4.5

ph-index = 5

Forward Citations = 74(Granted Patents)

Forward Citations (Not Self Cited) = 63(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Kanagawa-ken, JP (2013 - 2017)
Yokohama, JP (2008 - 2024)

Company Filing History:

57 out of 52,735

Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Nuflare Technology, Inc.

where one patent can have more than one assignee

Years Active: 2008-2025

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Areas of Expertise:

Nitride Semiconductor

Semiconductor Device

Vapor Phase Growth

Crystal Growth Method

Semiconductor Light Emitting Device

P-Type Semiconductor Layer

Wafer Manufacturing

Impurity Concentrations

Vapor Deposition Method

Semiconductor Element

Manufacturing Apparatus

59 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12501637 - Nitride semiconductor and semiconductor device (2025-12-16),

2. 12477799 - Nitride semiconductor and semiconductor device (2025-11-18),

3. 12469698 - Wafer having silicon substrate with suppressed fractures, semiconductor device, and method for manufacturing the wafer (2025-11-11),

4. 12266698 - Nitride semiconductor including multi-portion nitride region (2025-04-01),

5. 12170318 - Nitride semiconductor, semiconductor device, and method for manufacturing nitride semiconductor (2024-12-17),

6. 11955520 - Nitride semiconductor with multiple nitride regions of different impurity concentrations, wafer, semiconductor device and method for manufacturing the same (2024-04-09),

7. 11757006 - Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus of semiconductor device (2023-09-12),

8. 11469304 - Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus of semiconductor device (2022-10-11),

9. 11072856 - Vapor phase growth method (2021-07-27),

10. 10351949 - Vapor phase growth method (2019-07-16),

11. 9679974 - Nitride semiconductor element, nitride semiconductor wafer, and method for forming nitride semiconductor layer (2017-06-13),

12. 9590141 - Semiconductor light emitting device having a p-type semiconductor layer with a p-type impurity (2017-03-07),

13. 9391145 - Nitride semiconductor element and nitride semiconductor wafer (2016-07-12),

14. 9331234 - Semiconductor light emitting device and method for manufacturing semiconductor light emitting device (2016-05-03),

15. 9263632 - Semiconductor light emitting device (2016-02-16),

Title: Inventor Hajime Nago

Introduction: Hajime Nago is a renowned inventor hailing from Kanagawa-ken, Japan. He has made significant contributions to the field of innovation with his groundbreaking inventions.

Latest Patents: Hajime Nago holds several patents in various technological domains, showcasing his continuous commitment to pushing the boundaries of innovation.

Career Highlights: Throughout his illustrious career, Hajime Nago has been recognized for his inventive spirit and problem-solving abilities. His inventions have not only revolutionized industries but have also improved the lives of many.

Collaborations: Hajime Nago has collaborated with leading research institutions, universities, and companies to further develop and implement his innovative ideas. These partnerships have been instrumental in bringing his inventions to the market.

Conclusion: In conclusion, Hajime Nago stands as a visionary inventor whose passion for innovation has left a lasting impact on the world. His dedication to creating solutions that make a difference highlights his remarkable contributions to the field of technology.

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