The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Jun. 24, 2014
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiki Hikosaka, Kawasaki, JP;
Hisashi Yoshida, Koto-ku, JP;
Hajime Nago, Yokohama, JP;
Naoharu Sugiyama, Komatsu, JP;
Shinya Nunoue, Ichikawa, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a nitride semiconductor element includes: a stacked body; and a functional layer. The stacked body includes a first GaN layer, a first layer, and a second GaN layer. The first GaN layer includes a first protrusion. The first layer is provided on the first GaN layer and contains at least one of Si and Mg. The second GaN layer is provided on the first layer and includes a second protrusion. Length of bottom of the second protrusion is shorter than length of bottom of the first protrusion. A functional layer is provided on the stacked body and includes a nitride semiconductor.