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For the Inventor, By the Inventor

Kanagawa, Japan

Naoharu Sugiyama

This inventor holds 69 USPTO granted patents and 17 published patent applications and 4 EPO patents, primarily in Nitride Semiconductors (CPC class H01L). Top assignees: Kabushiki Kaisha Toshiba, Alpad Corporation, Oki Electric Industry Co., Ltd.. Active years: 1987-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Naoharu Sugiyama. Retrieved from https://idiyas.com/inventor/naoharu-sugiyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 69 

% Patents Active = 84.1

 

Average Co-Inventor Count = 4.3

ph-index = 16

Forward Citations = 1,739(Granted Patents)

Forward Citations (Not Self Cited) = 1,723(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Yokohama, JP (1987 - 2015)
  • Komatsu, JP (2015 - 2017)
  • Komatsu Ishikawa, JP (2017)
  • Kanagawa-ken, JP (2001 - 2018)

Company Filing History:

goldMedal68 out of 53,276 
 
Kabushiki Kaisha Toshiba
 patents
silverMedal1 out of 13 
 
Alpad Corporation
 patents
bronzeMedal1 out of 4,980 
 
Oki Electric Industry Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 1987-2018

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Areas of Expertise:
Nitride Semiconductor
Semiconductor Wafer
Light Emitting Device
Crystal Growth
Manufacturing Method
Doped Nitride
Multilayer Structure
Wafer Fabrication
Semiconductor Element
Layer Formation
Semiconductor Device
Lattice Constants
69 patents (USPTO):Explore Patents
1. 10008571 - Semiconductor wafer, semiconductor device, and method for manufacturing nitride semiconductor layer (2018-06-26),
2. 9679974 - Nitride semiconductor element, nitride semiconductor wafer, and method for forming nitride semiconductor layer (2017-06-13),
3. 9673284 - Nitride semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer (2017-06-06),
4. 9543146 - Manufacturing method of semiconductor device that includes forming plural nitride semiconductor layers of identical material (2017-01-10),
5. 9508804 - Nitride semiconductor element and nitride semiconductor wafer (2016-11-29),
6. 9478706 - Semiconductor light emitting device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer (2016-10-25),
7. 9419175 - Semiconductor light emitting device (2016-08-16),
8. 9397167 - Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer (2016-07-19),
9. 9349590 - Method for manufacturing nitride semiconductor layer (2016-05-24),
10. 9324916 - Semiconductor light emitting device (2016-04-26),
11. 9312436 - Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer (2016-04-12),
12. 9305773 - Semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer (2016-04-05),
13. 9287369 - Nitride semiconductor element and nitride semiconductor wafer (2016-03-15),
14. 9202873 - Semiconductor wafer for semiconductor device having a multilayer (2015-12-01),
15. 9178111 - Semiconductor light emitting device (2015-11-03),

Title: Naoharu Sugiyama: Innovator in Semiconductor Technology

Introduction

Naoharu Sugiyama, based in Kanagawa-ken, Japan, stands out as a leading innovator in the realm of semiconductor technology. With an impressive portfolio of 69 patents, Sugiyama has contributed significantly to advancements in semiconductor materials and manufacturing processes.

Latest Patents

Sugiyama's latest patents include innovations such as a semiconductor wafer, a semiconductor device, and a method for manufacturing nitride semiconductor layers. One embodiment describes a semiconductor wafer that incorporates a substrate and various layers, including an AlN buffer layer and multiple composition layers designed to enhance performance. The methodology outlines how these layers interact under tensile and compressive strains, showcasing a sophisticated understanding of material properties.

Another of his significant inventions pertains to a nitride semiconductor element that includes a stacked body composed of GaN layers, integrated with functional layers. The design features protrusions of varied lengths, which optimize the device's electrical characteristics. This innovation illustrates Sugiyama's commitment to pushing the boundaries of semiconductor efficiency and capability.

Career Highlights

Throughout his career, Sugiyama has been affiliated with notable companies, including Toshiba Corporation and Oki Electric Industry Co., Ltd. His work has not only propelled his employers forward but has also laid the groundwork for advancements in semiconductor technology globally.

Collaborations

Naoharu Sugiyama has collaborated with esteemed professionals in the field, including Shinya Nunoue and Tomonari Shioda. These partnerships have fostered an environment of shared knowledge and innovation, contributing to the development of impactful technological solutions and patents.

Conclusion

Naoharu Sugiyama's contributions to semiconductor technology, marked by his extensive patent portfolio and collaborations with industry professionals, highlight his role as a key figure in advancing innovation. His work continues to influence the field, paving the way for future breakthroughs in semiconductor manufacturing and design.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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