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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9508804 B1

PDFFull Text
Date of Patent:
Nov. 29, 2016

Filed:

Feb. 16, 2016

Nitride semiconductor element and nitride semiconductor wafer

Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Toshiki Hikosaka, Kanagawa-ken, JP;

Yoshiyuki Harada, Tokyo, JP;

Hisashi Yoshida, Kanagawa-ken, JP;

Naoharu Sugiyama, Kanagawa-ken, JP;

Shinya Nunoue, Chiba-ken, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Nikolay Yushin

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/00 (2006.01); H01L 33/00 (2010.01); H01L 29/205 (2006.01); H01L 29/20 (2006.01); H01L 33/06 (2010.01); H01L 21/02 (2006.01); H01L 29/778 (2006.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01); H01L 29/36 (2006.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 29/2003 (2013.01); H01L 29/365 (2013.01); H01L 29/7783 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01); B82Y 20/00 (2013.01);
Abstract

According to one embodiment, a nitride semiconductor element includes a foundation layer, a functional layer and a stacked body. The stacked body is provided between the foundation layer and the functional layer. The stacked body includes a first stacked intermediate layer including a first GaN intermediate layer, a first high Al composition layer of AlGaN (0<x1≦1) and a first low Al composition layer. A compressive strain is applied to the first low Al composition layer. Unstrained GaN has a first lattice spacing. The AlGaN (0<x1≦1) when unstrained has a second lattice spacing. The first high Al composition layer has a third lattice spacing. An Al composition ratio of the first low Al composition layer is not more than a ratio of a difference between the first and third lattice spacings to a difference between the first and second lattice spacings.

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