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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9324916 B1

PDFFull Text
Date of Patent:
Apr. 26, 2016

Filed:

Sep. 29, 2015

Semiconductor light emitting device

Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Jumpei Tajima, Tokyo, JP;

Kotaro Zaima, Ishikawa-ken, JP;

Toshiki Hikosaka, Kanagawa-ken, JP;

Hiroshi Ono, Tokyo, JP;

Naoharu Sugiyama, Kanagawa-ken, JP;

Shinya Nunoue, Chiba-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Teresa M Arroyo

Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 27/14 (2006.01); H01L 31/0232 (2014.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 33/38 (2010.01); H01L 31/0224 (2006.01); H01L 29/04 (2006.01); H01L 21/02 (2006.01); H01L 51/44 (2006.01); H01L 33/36 (2010.01); H01L 31/036 (2006.01); H01L 33/32 (2010.01); H01L 33/16 (2010.01); H01L 33/18 (2010.01); H01L 33/22 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); H01L 33/382 (2013.01); H01L 21/02027 (2013.01); H01L 21/02516 (2013.01); H01L 21/02609 (2013.01); H01L 29/04 (2013.01); H01L 31/0224 (2013.01); H01L 31/036 (2013.01); H01L 33/16 (2013.01); H01L 33/18 (2013.01); H01L 33/20 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01); H01L 33/36 (2013.01); H01L 51/441 (2013.01); H01L 2933/0016 (2013.01);
Abstract

According to one embodiment, a semiconductor light emitting device includes an electrode layer, a first semiconductor layer, a first elongated electrode, a second semiconductor layer, and a light emitting layer. The first semiconductor layer includes a crystal having a cleavage plane. The first semiconductor layer includes a first thin film portion and a thick film portion. The first thin film portion extends in a first direction perpendicular to a stacking direction from the electrode layer toward the first semiconductor layer. The first thin film portion has a first thickness. The thick film portion is arranged with the first thin film portion in a plane perpendicular to the stacking direction. An angle between the first direction and the cleavage plane is not less than 3 degrees and not more than 27 degrees. The first elongated electrode extends in the first direction in contact with the first thin film portion.

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