The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Apr. 16, 2015
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiki Hikosaka, Kanagawa-ken, JP;
Yoshiyuki Harada, Tokyo, JP;
Hisashi Yoshida, Tokyo, JP;
Naoharu Sugiyama, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a nitride semiconductor device includes a stacked body and a functional layer. The stacked body includes an AlGaN layer of AlGaN (0<x≦1), a first Si-containing layer, a first GaN layer, a second Si-containing layer, and a second GaN layer. The first Si-containing layer contacts an upper surface of the AlGaN layer. The first Si-containing layer contains Si at a concentration not less than 7×10/cmand not more than 4×10/cm. The first GaN layer is provided on the first Si-containing layer. The first GaN layer includes a protrusion having an oblique surface tilted with respect to the upper surface. The second Si-containing layer is provided on the first GaN layer. The second Si-containing layer contains Si. The second GaN layer is provided on the second Si-containing layer. The functional layer is provided on the stacked body. The functional layer includes a nitride semiconductor.