Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Nuflare Technology, Inc.

Hajime Nago

Shinya Nunoue

Koichi Tachibana

Toshiki Hikosaka

Shigeya Kimura

Yoshiyuki Harada

Toshiyuki Oka

Hisashi Yoshida

Jumpei Tajima

Chie Hongo

Kotaro Zaima

Shinji Saito

Hiroshi Ono

Naoharu Sugiyama

Yasushi Iyechika

Tomonari Shioda

Toru Gotoda

Masayuki Tsukui

Kiyotaka Miyano

Genichi Hatakoshi

Taisuke Sato

Maki Sugai

Hideshi Takahashi

Masanobu Ando

According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including AlGaN (0<x≤1), a second nitride region including AlGaN (0≤x<1), and an intermediate region being between the first nitride region and the second nitride region. In a first direction from the first nitride region to the second nitride region, an oxygen concentration in the nitride member has a peak value at a first position included in the intermediate region. The peak value is 4.9 times or more a first oxygen concentration in the first nitride region. A second carbon concentration in the second nitride region is higher than a first carbon concentration in the first nitride region.

Nitride semiconductor and semiconductor device

According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including AlGaN, a second nitride region including AlGaN, and a third nitride region including AlGaN. The second nitride region is provided between the first and third nitride regions in a first direction from the first nitride region to the second nitride region. The second nitride region includes carbon and oxygen. The first nitride region does not include carbon, or a second carbon concentration in the second nitride region is higher than a first carbon concentration in the first nitride region. The second carbon concentration is higher than a third carbon concentration in the third nitride region. A ratio of a second oxygen concentration in the second nitride region to the second carbon concentration is not less than 1.0×10and not more than 1.4×10.

According to one embodiment, a wafer includes a silicon substrate including a first surface, and a nitride semiconductor layer provided on the first surface. The silicon substrate includes a plurality of first regions that can be distinguished from each other in an X-ray image of the wafer. The first regions are separated from an outer edge region of the silicon substrate. One of the first regions includes a plurality of first linear bodies along a first line direction. An other one of the first regions includes a plurality of second linear bodies along a second line direction. The second line direction crosses the first line direction.

Wafer having silicon substrate with suppressed fractures, semiconductor device, and method for manufacturing the wafer

According to one embodiment, a nitride semiconductor includes a base body, and a nitride member. The nitride member includes a first nitride region including AlGaN (0<x1≤1), and a second nitride region including AlGaN (0≤x2<1, x2<x1). The first nitride region is between the base body and the second nitride region. The first nitride region includes a first portion and a second portion. The second portion is between the first portion and the second nitride region. An oxygen concentration in the first portion is higher than an oxygen concentration in the second portion. The oxygen concentration in the second portion is not more than 1×10/cm. A first thickness of the first portion in a first direction from the first to second nitride regions is thinner than a second thickness of the second portion in the first direction.

Nitride semiconductor including multi-portion nitride region

According to one embodiment, a nitride semiconductor includes a base body, a nitride member, and an intermediate region provided between the base body and the nitride member. The nitride member includes a first nitride region including AlGaN (0<x1≤1), and a second nitride region including AlGaN (0≤x2<1, x2<x1). The first nitride region is between the intermediate region and the second nitride region. The intermediate region includes nitrogen and carbon. A concentration of carbon in the intermediate region is not less than 1.5×10/cmand not more than 6×10/cm.

Nitride semiconductor, semiconductor device, and method for manufacturing nitride semiconductor

According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including AlGaN (0<x1≤1), a second nitride region including AlGaN (0<x2<1, x2<x1), and a third nitride region. The second nitride region is between the first nitride region and the third nitride region. The third nitride region includes Al, Ga, and N. The third nitride region does not include carbon, alternatively a third carbon concentration in the third nitride region is lower than a second carbon concentration in the second nitride region.

Nitride semiconductor with multiple nitride regions of different impurity concentrations, wafer, semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device is provided, the method including forming an intermediate region including AlGaN (0&#x3c;x3&#x2264;1 and x2&#x3c;x3) on a first semiconductor layer including AlGaN (0&#x2264;x1&#x3c;1); and forming a second semiconductor layer including AlInN (0&#x3c;x2&#x3c;1 and x1&#x3c;x2) on the intermediate region, a first gas being used to form the intermediate region in the forming of the intermediate region, the first gas including a gas including Al, a gas including ammonia, and a gas including hydrogen, and a second gas being used to form the second semiconductor layer in the forming of the second semiconductor layer, the second gas including a gas including Al, a gas including In, a gas including ammonia, and a gas including nitrogen.

Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus of semiconductor device

According to one embodiment, a semiconductor device includes a first semiconductor layer including AlGaN (0&#x2264;x1&#x3c;1), a second semiconductor layer including AlInN (0&#x3c;x2&#x3c;1 and x1&#x3c;x2), and an intermediate region provided between the first and second semiconductor layers. The intermediate region includes AlGaN (0&#x3c;x3&#x2264;1 and x2&#x3c;x3). The second semiconductor layer includes first and second surfaces. The second surface is between the intermediate region and the first surface in a first direction. The first direction is from the first semiconductor layer toward the second semiconductor layer. The second semiconductor layer includes a plurality of first pits provided in the first surface. Widths of the first pits are 200 nm or more. A density in the first surface of the first pits is not less than 5&#xd7;10/cmand not more than 1&#xd7;10/cm.

Provided is a vapor phase growth method according to an embodiment including loading a first substrate into a reaction chamber, generating a first mixed gas by mixing an indium containing gas, an aluminum containing gas, and a nitrogen compound containing gas, and forming a first indium aluminum nitride film on the first substrate by supplying the first mixed gas into the reaction chamber, the first substrate being rotated at a first rotation speed of 300 rpm or more.

Vapor phase growth method

A vapor phase growth method according to an embodiment is a vapor phase growth method of forming on a single substrate a film having a composition different from a composition of the substrate. The method includes, rotating the single substrate with a center of the single substrate being a rotation center, heating a single substrate to a first temperature, and forming a silicon carbide film having a film thickness of 10 nm or more and 200 nm or less on a surface of the single substrate by supplying a first process gas containing silicon and carbon as a laminar flow in a direction substantially perpendicular to the surface of the single substrate.

According to one embodiment, a nitride semiconductor element includes: a stacked body; and a functional layer. The stacked body includes a first GaN layer, a first layer, and a second GaN layer. The first GaN layer includes a first protrusion. The first layer is provided on the first GaN layer and contains at least one of Si and Mg. The second GaN layer is provided on the first layer and includes a second protrusion. Length of bottom of the second protrusion is shorter than length of bottom of the first protrusion. A functional layer is provided on the stacked body and includes a nitride semiconductor.

Nitride semiconductor element, nitride semiconductor wafer, and method for forming nitride semiconductor layer

According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting part, and a p-side electrode. The light emitting part is provided between the n-type and the p-type semiconductor layers, and includes a plurality of barrier layers and a plurality of well layers. The p-side electrode contacts the p-type semiconductor layer. The p-type semiconductor layer includes first, second, third, and fourth p-type layers. The first p-type layer contacts the p-side electrode. The second p-type layer contacts the light emitting part. The third p-type layer is provided between the first p-type layer and the second p-type layer. The fourth p-type layer is provided between the second p-type layer and the third p-type layer. The second p-type layer contains Al and contains a p-type impurity in a lower concentration lower than that in the first concentration.

Semiconductor light emitting device having a p-type semiconductor layer with a p-type impurity

According to one embodiment, a nitride semiconductor element includes a functional layer and a stacked body. The stacked body includes a GaN intermediate layer, a low Al composition layer, a high Al composition layer, and a first Si-containing layer. The low Al composition layer includes a nitride semiconductor having a first Al composition ratio. The low Al composition layer is provided between the GaN intermediate layer and the functional layer. The high Al composition layer includes a nitride semiconductor having a second Al composition ratio. The high Al composition layer is provided between the GaN intermediate layer and the low Al composition layer. The second Al composition ratio is higher than the first Al composition ratio. The first Si-containing layer is provided between the GaN intermediate layer and the high Al composition layer.

Nitride semiconductor element and nitride semiconductor wafer

According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer. The p-type semiconductor layer includes a first p-side layer, a second p-side layer, and a third p-side layer. A concentration profile of Mg of a p-side region includes a first portion, a second portion, a third portion, a fourth portion, a fifth portion, a sixth portion and a seventh portion. The p-side region includes the light emitting layer, the second p-side layer, and the third p-side layer. A Mg concentration of the sixth portion is not less than 1&#xd7;10cmand not more than 3&#xd7;10cm. The Al concentration is 1/100 of the maximum value at a second position. A Mg concentration at the second position is not less than 2&#xd7;10cm.

Semiconductor light emitting device and method for manufacturing semiconductor light emitting device

According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing III group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.

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Kanagawa-ken, Japan

Hajime Nago