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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11955520 B1

PDFFull Text
Date of Patent:
Apr. 09, 2024

Filed:

Jul. 08, 2021

Nitride semiconductor with multiple nitride regions of different impurity concentrations, wafer, semiconductor device and method for manufacturing the same

Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Toshiki Hikosaka, Kawasaki, JP;

Hajime Nago, Yokohama, JP;

Jumpei Tajima, Mitaka, JP;

Shinya Nunoue, Ichikawa, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Mark W Tornow

Assistant Examiner:

David Paul Sedorook

Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/15 (2006.01); H01L 29/207 (2006.01); H01L 29/36 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0254 (2013.01); H01L 21/02576 (2013.01); H01L 21/0262 (2013.01); H01L 29/155 (2013.01); H01L 29/207 (2013.01); H01L 29/36 (2013.01); H01L 29/7786 (2013.01);
Abstract

According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including AlGaN (0<x1≤1), a second nitride region including AlGaN (0<x2<1, x2<x1), and a third nitride region. The second nitride region is between the first nitride region and the third nitride region. The third nitride region includes Al, Ga, and N. The third nitride region does not include carbon, alternatively a third carbon concentration in the third nitride region is lower than a second carbon concentration in the second nitride region.

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