The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Jul. 28, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device is provided, the method including forming an intermediate region including AlGaN (0<x3≤1 and x2<x3) on a first semiconductor layer including AlGaN (0≤x1<1); and forming a second semiconductor layer including AlInN (0<x2<1 and x1<x2) on the intermediate region, a first gas being used to form the intermediate region in the forming of the intermediate region, the first gas including a gas including Al, a gas including ammonia, and a gas including hydrogen, and a second gas being used to form the second semiconductor layer in the forming of the second semiconductor layer, the second gas including a gas including Al, a gas including In, a gas including ammonia, and a gas including nitrogen.