The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Aug. 01, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
According to one embodiment, a nitride semiconductor includes a base body including boron, a first nitride region including AlGaN (0.98<x1≤1), and a second nitride region including AlGaN (0≤x2<1, x2<x1). A concentration of boron in the base body is not less than 1×10cm. The first nitride region is between the base body and the second nitride region. The first nitride region includes a first surface facing the base body and a second surface facing the second nitride region. A second concentration of boron in the second surface is not more than 1/8000 of a first concentration of boron in the first surface.