The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Jul. 28, 2023
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Infrastructure Systems & Solutions Corporation, Kawasaki, JP;
Toshiki Hikosaka, Kawasaki Kanagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Kawasaki, JP;
Abstract
According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member include a first nitride region, a second nitride region, and intermediate region. The first nitride region includes AlGaN (0≤x1<1). The AlGaN includes a first element including at least one selected from the group consisting of Fe and Mn. The second nitride region includes AlGaN (0≤x2≤1). A direction from the first nitride region to the second nitride region is along a first direction. The intermediate region is provided between the first nitride region and the second nitride region. The intermediate region includes AlGaN (0≤z1≤1, x1<z1, x2<z1). The AlGaN includes oxygen. A concentration of oxygen in the nitride member becomes maximum in the intermediate region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile