The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2021
Filed:
Sep. 19, 2018
Disco Corporation, Tokyo, JP;
Osaka University, Suita, JP;
Yusuke Mori, Suita, JP;
Masashi Yoshimura, Suita, JP;
Mamoru Imade, Suita, JP;
Masayuki Imanishi, Suita, JP;
Hiroshi Morikazu, Tokyo, JP;
Shin Tabata, Tokyo, JP;
Takumi Shotokuji, Toda, JP;
OSAKA UNIVERSITY, Osaka, JP;
DISCO CORPORATION, Tokyo, JP;
Abstract
There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.