The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2022

Filed:

Feb. 06, 2020
Applicants:

Osaka University, Osaka, JP;

Panasonic Corporation, Osaka, JP;

Inventors:

Yusuke Mori, Osaka, JP;

Masayuki Imanishi, Osaka, JP;

Masashi Yoshimura, Osaka, JP;

Kousuke Murakami, Osaka, JP;

Shinsuke Komatsu, Osaka, JP;

Masahiro Tada, Osaka, JP;

Yoshio Okayama, Osaka, JP;

Assignees:

OSAKA UNIVERSITY, Osaka, JP;

PANASONIC CORPORATION, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 19/10 (2006.01); C30B 19/12 (2006.01); C30B 19/02 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
C30B 19/12 (2013.01); C30B 19/02 (2013.01); C30B 29/403 (2013.01);
Abstract

A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.


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