The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Feb. 17, 2020
Panasonic Corporation, Osaka, JP;
Osaka University, Osaka, JP;
Yoshio Okayama, Osaka, JP;
Shinsuke Komatsu, Osaka, JP;
Masahiro Tada, Osaka, JP;
Yusuke Mori, Osaka, JP;
Masayuki Imanishi, Osaka, JP;
Masashi Yoshimura, Osaka, JP;
PANASONIC HOLDINGS CORPORATION, Osaka, JP;
OSAKA UNIVERSITY, Osaka, JP;
Abstract
An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.