The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Feb. 18, 2016
Osaka University, Suita-shi, JP;
Sumitomo Chemical Company, Limited, Tokyo, JP;
Yusuke Mori, Suita, JP;
Masashi Yoshimura, Suita, JP;
Mamoru Imade, Suita, JP;
Masatomo Shibata, Hitachi, JP;
Takehiro Yoshida, Hitachi, JP;
OSAKA UNIVERSITY, Suita-Shi, Osaka, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Abstract
A method for manufacturing a group III nitride semiconductor crystal substrate includes providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method, and homoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate. The principal surface of the seed crystal substrate is a +c-plane, and the seed crystal substrate has an atomic oxygen concentration of not more than 1×10cmin a crystal near the principal surface over an entire in-plane region thereof.