Osaka University

Panasonic Holdings Corporation

Panasonic Corporation

Japan Science and Technology Corporation

Matsushita Electric Industrial Co., Ltd.

Toyoda Gosei Co., Ltd.

Ricoh Company, Ltd.

Ngk Insulators, Inc.

Research Development Corporation of Japan

Other

Panasonic Intellectual Property Management Co., Ltd.

Tokyo Electron Limited

Shimadzu Corporation

West Electric Co., Ltd.

Tokyo University of Agriculture and Technology

Yusuke Mori

Masashi Yoshimura

Takatomo Sasaki

Yoshio Okayama

Junichi Takino

Mamoru Imade

Fumio Kawamura

Yasuo Kitaoka

Katsuhiro Imai

Makoto Iwai

Shiro Yamazaki

Takehiro Yoshida

Nobuaki Takahashi

Hisashi Minemoto

Mikiya Ichimura

Masayuki Imanishi

Tomoaki Sumi

Akira Kitamoto

Masashi Isemura

Seiji Nagai

Shinsuke Komatsu

Takayuki Sato

Hirofumi Yamashita

Takashi Maniwa

Toshihiro Terada

Akio Hiraki

Shunichi Matsuno

Sadao Nakai

Shigeyoshi Usami

Kousuke Murakami

Masahiro Tada

Seiji Sarayama

Yuji Matsumoto

Masatomo Shibata

Hirokazu Iwata

Hideomi Koinuma

Akinori Koukitu

Norikazu Yamamoto

Ryoji Suzuki

Osamu Yamada

Teruaki Shigeta

Akira Usui

Haruo Yamazaki

Koji Hirata

Shuhei Higashihara

Nobuhiro Shimizu

Seizo Morita

Takashi Satoh

Ryo Kuwabara

Koji Neishi

Masayuki Abe

Tomio Yamashita

Hiroaki Adachi

Takeshi Hatakeyama

Kouichi Hiranaka

Michirou Yoshino

Noriaki Oyabu

Masayuki Hoteida

Masanori Morishita

Masahiro Ota

Minoru Kawahara

Hisashi Dejima

Ryuji Katayama

Hitoshi Miura

Koji Takasaki

Masaki Tanabe

Koichiro Matsuoka

Jisashi Minemoto

The method of forming a nitride semiconductor film includes intermittently sputtering a target of gallium nitride inside a vacuum chamber containing nitrogen and argon, and depositing sputtered particles of the gallium nitride that are scattered from the target inside the vacuum chamber, on a substrate having a temperature of 560 degrees C. or higher and 650 degrees C. or lower. A ratio of a flow rate of the nitrogen to a sum of the flow rate of the nitrogen and a flow rate of the argon supplied to the vacuum chamber is 6% or higher and 18% or lower.

Method of forming nitride semiconductor film

A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.

Group-III nitride substrate

A manufacturing apparatus for a group-III nitride crystal, the manufacturing apparatus includes: a raw material chamber that produces therein a group-III element oxide gas; and a nurturing chamber in which a group-III element oxide gas supplied from the raw material chamber and a nitrogen element-containing gas react therein to produce a group-III nitride crystal on a seed substrate, wherein an angle that is formed by a direction along a shortest distance between a forward end of a group-III element oxide gas supply inlet to supply the group-III element oxide gas into the nurturing chamber and an outer circumference of the seed substrate placed in the nurturing chamber, and a surface of the seed substrate is denoted by 'θ', wherein a diameter of the group-Ill element oxide gas supply inlet is denoted by “S”, wherein a distance between a surface, on which the seed substrate is placed, of a substrate susceptor that holds the seed substrate and a forward end of a first carrier gas supply inlet to supply a first carrier gas into the nurturing chamber is denoted by “L”, wherein a distance between the forward end of the first carrier gas supply inlet and the forward end of the group-III element oxide gas supply inlet is denoted by “M”, wherein a diameter of the seed substrate is denoted by “k”, and wherein following Eqs. (1) to (4), 0°<θ<90° (1), 0.21≤S/k≤0.35 (2), 1.17≤(L+M)/k≤1.55 (3), k=2*(L+M)/tan θ+S (4) are satisfied.

Manufacturing apparatus for a group-III nitride crystal comprising a raw material chamber and a nurturing chamber in which a group III-element oxide gas and a nitrogen element-containing gas react to produce a group-III nitride crystal on a seed substrate

A manufacturing method for a group-III nitride crystal, the manufacturing method includes: preparing a seed substrate; increasing temperature of the seed substrate placed in a nurturing chamber; and supplying a group-III element oxide gas produced in a raw material chamber connected to the nurturing chamber by a connecting pipe and a nitrogen element-containing gas into the nurturing chamber to grow a group-III nitride crystal on the seed substrate, wherein a flow amount y of a carrier gas supplied into the raw material chamber at the temperature increase step satisfies following two relational equations (I) and (II), y<[1−k*H(Ts)]/[k*H(Ts)−j*H(Tg)]*j*H(Tg)*t (I), y≥1.58*10*(22.4/28)S*F(N)/F(T) (II), wherein k represents an arrival rate to a saturated vapor pressure of a group-III element in the raw material chamber, Ts represents a temperature of the raw material chamber, Tg represents a temperature of the nurturing chamber, H(Ts) represents a saturated vapor pressure of the group-III element at the temperature Ts in the raw material chamber, H(Tg) represents a saturated vapor pressure of the group-III element at the temperature Tg in the nurturing chamber, j represents a corrective coefficient, t represents a sum of gas flow amounts flowing into the nurturing chamber from those other than the raw material chamber, S represents a cross-sectional area of the connecting pipe, F(N) represents a volumetric flow amount of the nitrogen element-containing gas supplied into the nurturing chamber, and F(T) represents a sum of volumetric flow amounts of gases supplied into the nurturing chamber from those other than the raw material chamber.

Manufacturing method for a group-III nitride crystal that requires a flow amount of a carrier gas supplied into a raw material chamber at a temperature increase step satisfies two relational equations (I) and (II)

A method of manufacturing a group III nitride crystal according to a first aspect includes: preparing a seed substrate; generating a group III element oxide gas; supplying the group III element oxide gas; supplying a nitrogen element-containing gas; supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NOgas, NO gas, and NOgas; and growing the group III nitride crystal on the seed substrate.

Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrate

A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (P/P) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Pis a supply partial pressure of the group-III element oxide gas, and the Pis an equilibrium partial pressure of the group-III element oxide gas.

Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containng gas at a supersation ratio of greater than 1 and equal to or less than 5

A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element, and the concentration of the N-type dopant is 1&#xd7;10cmor more, and the concentration of the hydrogen element is 1&#xd7;10cmor more.

Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal

A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a germanium element, the concentration of the N-type dopant is 1&#xd7;10cmor more, and the concentration of the germanium element is nine times or more higher than the concentration of the N-type dopant.

A group-III nitride substrate includes: a base material part of a group-III nitride including a front surface, a back surface, and an inner layer between the front surface and the back surface, wherein the carbon concentration of the front surface of the base material part is higher than the carbon concentration of the inner layer.

Group-III nitride substrate containing carbon at a surface region thereof

An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.

Method for producing group III nitride crystal and seed substrate

A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.

Method of manufacturing a group III-nitride crystal comprising a nucleation step, a pyramid growth step, a lateral growth step, and a flat thick film growth step

Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containing gas at a supersaturation ratio of greater than 1 and equal to or less than 5

A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.

Production method for group III nitride crystal

A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystalby liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystalon the first crystalby vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals(preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystalsto produce a first crystal

Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal

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Osaka, Japan

Yusuke Mori