The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2013

Filed:

May. 20, 2009
Applicants:

Seiji Nagai, Aichi, JP;

Shiro Yamazaki, Aichi, JP;

Yasuhide Yakushi, Aichi, JP;

Takayuki Sato, Aichi, JP;

Makoto Iwai, Nagoya, JP;

Katsuhiro Imai, Nagoya, JP;

Yusuke Mori, Suita, JP;

Yasuo Kitaoka, Suita, JP;

Inventors:

Seiji Nagai, Aichi, JP;

Shiro Yamazaki, Aichi, JP;

Yasuhide Yakushi, Aichi, JP;

Takayuki Sato, Aichi, JP;

Makoto Iwai, Nagoya, JP;

Katsuhiro Imai, Nagoya, JP;

Yusuke Mori, Suita, JP;

Yasuo Kitaoka, Suita, JP;

Assignees:

Toyoda Gosei Co., Ltd., Nishikasugai-Gun, Aichi-Ken, JP;

NGK Insulators, Ltd., Nagoya-Shi, Aichi, JP;

Osaka University, Suita-Shi, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal. The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.


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