The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2007
Filed:
Mar. 12, 2002
Seiji Nagai, Aichi, JP;
Masayoshi Koike, Aichi, JP;
Kazuyoshi Tomita, Aichi, JP;
Toyoda Gosei Co., Ltd, Aichi-ken, JP;
Kabushiki Kaisha Toyota Chuo Kenkyusho, Aichi-ken, JP;
Abstract
In the epitaxial growth process in which each growth region D is zoned by a maskformed in grid pattern, because a consumption region C of the Group III nitride compound semiconductor is formed in the central portion of each band of the maskbetween each adjacent edge portion of the growth region D, Group III or Group V raw material is never unnecessarily supplied to the edge portion of the growth region D. As a result, difference of Group III or Group V rare material supply amount to the edge portion and central portion of the device formation region D is suppressed and the edge portion of the device region may not be convexity.