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For the Inventor, By the Inventor

Aichi, Japan

Masayoshi Koike

This inventor holds 59 USPTO granted patents, plus 1 CIPO patent, primarily in Group III Nitride Semiconductors (CPC class H01L). Top assignees: Toyoda Gosei Co., Ltd., Research Development Corporation of Japan, El-Seed Corporation. Active years: 1997-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masayoshi Koike. Retrieved from https://idiyas.com/inventor/masayoshi-koike

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 59

% Patents Active = 71.2

 

Average Co-Inventor Count = 3.2

ph-index = 20

Forward Citations = 1,450(Granted Patents)

Forward Citations (Not Self Cited) = 1,434(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Ichinomiya-shi, Aichi-ken, JP (1998)
  • Alchi-ken, JP (1999)
  • Ichinomiya, JP (1997 - 2005)
  • Nishikasugai-gun, JP (2002 - 2005)
  • Aichi-ken, JP (1997 - 2006)
  • Nakashima-gun, JP (1999 - 2011)
  • Aichi, JP (2000 - 2015)

Company Filing History:

goldMedal53 out of 3,086 
 
Toyoda Gosei Co., Ltd.
 patents
silverMedal2 out of 256 
 
Research Development Corporation of Japan
 patents
bronzeMedal1 out of 9 
 
El-Seed Corporation
 patents
4. 1 out of 1,153 
 
Kabushiki Kaisha Toyota Chuo Kenkyusho
 patents
5. 8 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 1997-2015

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Areas of Expertise:
Group III Nitride
Semiconductor Device
Light-Emitting Device
Nitride Compound
Laser Diode
Manufacturing Method
Semiconductor Laser
Aluminum Gallium Indium Nitride
Semiconductor Substrate
Crystal Producing Method
Element Production
Luminous Intensity
59 patents (USPTO):Explore Patents
1. 9142619 - Group III nitride semiconductor device and method for manufacturing the same (2015-09-22),
2. 7867800 - Light-emitting semiconductor device using group III nitrogen compound (2011-01-11),
3. 7560725 - Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices (2009-07-14),
4. 7491984 - Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices (2009-02-17),
5. 7332366 - Light-emitting semiconductor device using group III nitrogen compound (2008-02-19),
6. 7186579 - Method for producing a group III nitride compound semiconductor laser (2007-03-06),
7. 7163876 - Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor device (2007-01-16),
8. 7141444 - Production method of III nitride compound semiconductor and III nitride compound semiconductor element (2006-11-28),
9. 7138286 - Light-emitting semiconductor device using group III nitrogen compound (2006-11-21),
10. 7112243 - Method for producing Group III nitride compound semiconductor (2006-09-26),
11. 7084421 - Light-emitting device using group III nitride group compound semiconductor (2006-08-01),
12. 7045829 - Light-emitting semiconductor device using Group III nitride compound (2006-05-16),
13. 7001790 - Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity (2006-02-21),
14. 6979584 - Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device (2005-12-27),
15. 6962828 - Methods for manufacturing a light-emitting device (2005-11-08),

Title: Masayoshi Koike: Pioneering Innovations in the World of Semiconductors

Introduction:

Masayoshi Koike, a visionary inventor hailing from Aichi, Japan, has dedicated his life to pushing the boundaries of technology and creating a brighter future through his groundbreaking innovations. With an impressive portfolio of 59 patents to his name, Koike-san's work continues to inspire and shape the landscape of innovation for generations to come.

Latest Patents:

Among his recent achievements is the invention of a Group III nitride semiconductor device and a method for manufacturing the same. This invention aims to reduce dislocation density in a semiconductor layer with precision, paving the way for enhanced performance and efficiency in semiconductor devices. Additionally, his work on the light-emitting semiconductor device using a group III nitrogen compound showcases his expertise in optimizing luminous intensity and color purity in LEDs.

Career Highlights:

Masayoshi Koike's expertise is not only reflected in his patents but also in his impactful contributions to renowned companies such as Toyoda Gosei Co., Ltd. and others. His innovative spirit and relentless drive have led to significant advancements in the field of semiconductor technology, earning him a reputation as a trailblazer in the industry.

Collaborations:

Throughout his illustrious career, Koike-san has had the privilege of working alongside esteemed colleagues such as Seiji Nagai and Shiro Yamasaki. Their collaborative efforts have resulted in cutting-edge innovations that have revolutionized the semiconductor industry and set new standards for technological excellence.

Conclusion:

In conclusion, Masayoshi Koike's passion for innovation, coupled with his unwavering commitment to excellence, has established him as a true visionary in the world of inventions. His pioneering work not only showcases his technical prowess but also serves as a testament to the power of innovation in shaping a better tomorrow. As we look to the future, Koike-san's legacy will undoubtedly continue to inspire and drive progress in the realm of technology and inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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