The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2005
Filed:
Dec. 21, 2000
Masayoshi Koike, Aichi, JP;
Yuta Tezen, Aichi, JP;
Toshio Hiramatsu, Aichi, JP;
Toyoda Gosei Co, Ltd., Aichi-ken, JP;
Abstract
A first Group III nitride compound semiconductor layeris etched, to thereby form an island-like structure such as a dot-like, stripe-shaped, or grid-like structure, so as to provide a trench/post. Thus, a second Group III nitride compound layercan be epitaxially grown, vertically and laterally, from a top surface of the post and a sidewall/sidewalls of the trench serving as a nucleus for epitaxial growth, to thereby bury the trench and also grow the layer in the vertical direction. In this case, propagation of threading dislocations contained in the first Group III nitride compound semiconductor layercan be prevented in the upper portion of the second Group III nitride compound semiconductorthat is formed through lateral epitaxial growth. As a result, a region having less threading dislocations is formed at the buried trench.