Toyoda Gosei Co., Ltd.

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Research Development Corporation of Japan

Kabushiki Kaisha Toyota Chuo Kenkyusho

El-seed Corporation

Masayoshi Koike

Seiji Nagai

Shiro Yamasaki

Shinya Asami

Naoki Shibata

Norikatsu Koide

Shiro Yamazaki

Michinari Sassa

Yuta Tezen

Hisaki Kato

Katsuhide Manabe

Toshio Hiramatsu

Isamu Akasaki

Makoto Asai

Junichi Umezaki

Hiroshi Amano

Hiroshi Watanabe

Kazuyoshi Tomita

Akira Kojima

Takashi Hatano

Sho Iwayama

Yoshinobu Suehiro

Atsushi Suzuki

Hideaki Kato

Masanori Murakami

Tetsu Kachi

Jiro Matsuo

Takahiro Kozawa

Tsukasa Kitano

Isao Yamada

Makoto Tamaki

Takahide Oshio

Hiroshi Yamashita

Toshiyuki Kondo

Koichi Naniwae

Fumiharu Teramae

Midori Mori

Masami Yamada

Tomohiko Maeda

Tamiyo Umezaki

Katsuyuki Tsukui

Hidenori Ishikawa

[Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced. [Solution] In manufacturing a group III nitride semiconductor device, a mask layeris formed on a substrate, followed by selectively growing nanocolumnsmade of a group III nitride semiconductor through a patternof the mask layerin order to grow a group III nitride semiconductor layeron the mask layer

Group III nitride semiconductor device and method for manufacturing the same

A light-emitting semiconductor device () consecutively includes a sapphire substrate (), an AlN buffer layer (), a silicon (Si) doped GaN n-layer () of high carrier (n-type) concentration, a Si-doped (AlGa)InN n-layer () of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (AlGa)InN emission layer (), and a Mg-doped (AlGa)InN p-layer (). The AlN layer () has a 500 &#x212b; thickness. The GaN n-layer () has about a 2.0 &#x3bc;m thickness and a 2&#xd7;10/cmelectron concentration. The n-layer () has about a 2.0 &#x3bc;m thickness and a 2&#xd7;10/cmelectron concentration. The emission layer () has about a 0.5 &#x3bc;m thickness. The p-layerhas about a 1.0 &#x3bc;m thickness and a 2&#xd7;10/cmhole concentration. Nickel electrodes () are connected to the p-layer () and n-layer (), respectively. A groove () electrically insulates the electrodes (). The composition ratio of Al, Ga, and In in each of the layers () is selected to meet the lattice constant of GaN in the n-layer (). The LED () is designed to improve luminous intensity and to obtain purer blue color.

Light-emitting semiconductor device using group III nitrogen compound

A first Group III nitride compound semiconductor layeris etched, to thereby form an island-like structure such as a dot-like, stripe-shaped, or grid-like structure, so as to provide a trench/post. Thus, a second Group III nitride compound layercan be epitaxially grown, vertically and laterally, from a top surface of the post and a sidewall/sidewalls of the trench serving as a nucleus for epitaxial growth, to thereby bury the trench and also grow the layer in the vertical direction. In this case, propagation of threading dislocations contained in the first Group III nitride compound semiconductor layercan be prevented in the upper portion of the second Group III nitride compound semiconductorthat is formed through lateral epitaxial growth. As a result, a region having less threading dislocations is formed at the buried trench.

Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices

The present invention provides a Group III nitride compound semiconductor with suppressed generation of threading dislocations. A GaN layeris subjected to etching, so as to form an island-like structure having a shape of, for example, dot, stripe, or grid, thereby providing a trench/mesa structure, and a maskis formed at the bottom of the trench such that the upper surface of the maskis positioned below the top surface of the GaN layer. A GaN layeris lateral-epitaxially grown with the top surfaceof the mesa and sidewallsof the trench serving as nuclei, to thereby bury the trench, and then epitaxial growth is effected in the vertical direction. In the upper region of the GaN layerformed above the maskthrough lateral epitaxial growth, propagation of threading dislocations contained in the GaN layercan be prevented.

A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped AlGaN n-cladding layer, Si-doped GaN n-guide layer, an active layer having multiple quantum well (MQW) structure in which about 35 &#x212b; in thickness of GaN barrier layerand about 35 &#x212b; in thickness of GaInN well layerare laminated alternately, Mg-doped GaN p-guide layer, Mg-doped AlGaN p-layer, Mg-doped AlGaN p-cladding layer, and Mg-doped GaN p-contact layer are formed successively thereon. A ridged hole injection part B which contacts to a ridged laser cavity part A is formed to have the same width as the width w of an Ni electrode. Because the p-layer has a larger aluminum composition, etching rate becomes smaller and that can prevent from damaging the p-guide layer in this etching process.

Method for producing a group III nitride compound semiconductor laser

In the epitaxial growth process in which each growth region D is zoned by a maskformed in grid pattern, because a consumption region C of the Group III nitride compound semiconductor is formed in the central portion of each band of the maskbetween each adjacent edge portion of the growth region D, Group III or Group V raw material is never unnecessarily supplied to the edge portion of the growth region D. As a result, difference of Group III or Group V rare material supply amount to the edge portion and central portion of the device formation region D is suppressed and the edge portion of the device region may not be convexity.

Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor device

A first Group III nitride compound semiconductor layeris etched, to thereby form an island-like structure such as a dot-like, stripe-shaped, or grid-like structure, so as to provide a trench/mesa such that layer different from the first Group III nitride compound semiconductor layeris exposed at the bottom portion of the trench. Thus, a second Group III nitride compound layercan be epitaxially grown, laterally, with a top surface of the mesa and a sidewall/sidewalls of the trench serving as a nucleus, to thereby bury the trench and also grow the layer in the vertical direction. In this case, propagation of threading dislocations contained in the first Group III nitride compound semiconductor layercan be prevented in the upper portion of the second Group III nitride compound semiconductorthat is formed through lateral epitaxial growth. Etching may be performed until a cavity portion is provided in the substrate. The layer serving as a nucleus of ELO may be doped with indium (In) having an atomic radius greater than that of gallium (Ga) serving as a predominant element. The first semiconductor layer may be a multi-component layer containing a plurality of numbers of repetitions of a unit of a buffer layer and a single-crystal layer.

Production method of III nitride compound semiconductor and III nitride compound semiconductor element

A light-emitting semiconductor device () consecutively includes a sapphire substrate (), an AlN buffer layer (), a silicon (Si) doped GaN n-layer () of high carrier (n-type) concentration, a Si-doped (AlGa)InN n-layer () of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (AlGa)InN emission layer (), and a Mg-doped (AlGa)InN p-layer (). The AlN layer () has a 500 &#x212b; thickness. The GaN n-layer () has about a 2.0 &#x3bc;m thickness and a 2&#xd7;10/cmelectron concentration. The n-layer () has about a 2.0 &#x3bc;m thickness and a 2&#xd7;10/cmelectron concentration. The emission layer () has about a 0.5 &#x3bc;m thickness. The p-layer 6 has about a 1.0 &#x3bc;m thickness and a 2&#xd7;10/cmhole concentration. Nickel electrodes () are connected to the p-layer () and n-layer (), respectively. A groove () electrically insulates the electrodes (). The composition ratio of Al, Ga, and In in each of the layers () is selected to meet the lattice constant of GaN in the n-layer (). The LED () is designed to improve luminous intensity and to obtain purer blue color.

The present invention provides a method for producing a Group III nitride compound semiconductor, which method permits only minimal reaction of the semiconductor with a hetero-substrate during epitaxial growth and induces no cracks in the Group III nitride compound semiconductor even when the semiconductor is cooled to room temperature. The method includes a buffer layer formation step for forming a gas-etchable buffer layer on the hetero-substrate, and a semiconductor formation step for epitaxially growing the Group III nitride compound semiconductor on the buffer layer through a vapor phase growth method, wherein at least a portion of the buffer layer is gas-etched during or after the semiconductor formation step.

Method for producing Group III nitride compound semiconductor

A light-emitting semiconductor device provides an active layer which comprises thirteen (13) layers that includes six (6) pairs of quantum barrier layers made of AlInN and quantum well layers made of AlInN, which are laminated together alternately. The semiconductor device may also comprise a quantum well layer having a high composition ratio of indium (In). Forming the quantum barrier layer and the quantum well layer to have a high composition ratio of indium (In) increases the lattice constant of the active layer of the semiconductor device.

Light-emitting device using group III nitride group compound semiconductor

A Group III nitride compound semiconductor includes a multiple layer structure having an emission layer between an n-type cladding layer and a p-type cladding layer. The n-type cladding layer may be below the emission layer, having been formed on another n-type layer which was formed over a buffer Layer and a sapphire substrate. The emission layer has a thickness which is wider than the diffusion length of holes within the emission layer. The n-type cladding layer is doped with a donor impurity and has a lattice constant Substantially equal to a lattice constant of the emission layer. The p-type cladding layer is doped with an acceptor impurity and has a forbidden band sufficiently wider than the forbidden band of the emission layer in ordor to confine electrons injected into the emission layer.

Light-emitting semiconductor device using Group III nitride compound

Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity

Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device

A novel light-emitting device includes a saphire substrate with a light-emitting layer comprising InGaN, where the critical value of the indium mole fraction X is determined by a newly derived relationship between the indium mole fraction X and the wavelength &#x3bb; of emitted light.

Methods for manufacturing a light-emitting device

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Aichi, Japan

Masayoshi Koike