The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Nov. 25, 2011
Tsukasa Kitano, Aichi, JP;
Koichi Naniwae, Aichi, JP;
Masayoshi Koike, Aichi, JP;
Fumiharu Teramae, Aichi, JP;
Toshiyuki Kondo, Aichi, JP;
Atsushi Suzuki, Aichi, JP;
Tomohiko Maeda, Aichi, JP;
Midori Mori, Aichi, JP;
Tsukasa Kitano, Aichi, JP;
Koichi Naniwae, Aichi, JP;
Masayoshi Koike, Aichi, JP;
Fumiharu Teramae, Aichi, JP;
Toshiyuki Kondo, Aichi, JP;
Atsushi Suzuki, Aichi, JP;
Tomohiko Maeda, Aichi, JP;
Midori Mori, Aichi, JP;
EL-SEED CORPORATION, Nagoya-Shi, Aichi, JP;
Abstract
[Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced. [Solution] In manufacturing a group III nitride semiconductor device, a mask layeris formed on a substrate, followed by selectively growing nanocolumnsmade of a group III nitride semiconductor through a patternof the mask layerin order to grow a group III nitride semiconductor layeron the mask layer