The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2007
Filed:
Aug. 25, 2004
Takashi Hatano, Aichi, JP;
Sho Iwayama, Aichi, JP;
Masayoshi Koike, Aichi, JP;
Toyoda Gosei Co., Ltd., Aichi-Ken, JP;
Abstract
A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped AlGaN n-cladding layer, Si-doped GaN n-guide layer, an active layer having multiple quantum well (MQW) structure in which about 35 Å in thickness of GaN barrier layerand about 35 Å in thickness of GaInN well layerare laminated alternately, Mg-doped GaN p-guide layer, Mg-doped AlGaN p-layer, Mg-doped AlGaN p-cladding layer, and Mg-doped GaN p-contact layer are formed successively thereon. A ridged hole injection part B which contacts to a ridged laser cavity part A is formed to have the same width as the width w of an Ni electrode. Because the p-layer has a larger aluminum composition, etching rate becomes smaller and that can prevent from damaging the p-guide layer in this etching process.