The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Jan. 21, 2015
Applicant:
Kabushiki Kaisha Toyota Chuo Kenkyusho, Nagakute-shi, Aichi-ken, JP;
Inventors:
Tsutomu Uesugi, Nagakute, JP;
Tetsu Kachi, Nagakute, JP;
Daigo Kikuta, Nagakute, JP;
Tetsuo Narita, Nagakute, JP;
Assignee:
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, Nagakute-shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 29/41775 (2013.01); H01L 29/7786 (2013.01); H01L 29/2003 (2013.01); H01L 29/4236 (2013.01); H01L 29/42356 (2013.01);
Abstract
A semiconductor device is provided with an electronic transit layer, an electron supply layer, a source region, a drain electrode, a source electrode and an insulated gate. In a region between the drain electrode and the insulated gate, a two-dimensional electron gas layer is configured to be generated at a hetero junction between the electronic transit layer and the electron supply layer. A part of the insulated gate is configured to face to the source region.