The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2010
Filed:
Jun. 22, 2005
Masahiro Sugimoto, Toyota, JP;
Tetsu Kachi, Nisshin, JP;
Yoshitaka Nakano, Owariasahi, JP;
Tsutomu Uesugi, Seto, JP;
Hiroyuki Ueda, Kasugai, JP;
Narumasa Soejima, Seto, JP;
Masahiro Sugimoto, Toyota, JP;
Tetsu Kachi, Nisshin, JP;
Yoshitaka Nakano, Owariasahi, JP;
Tsutomu Uesugi, Seto, JP;
Hiroyuki Ueda, Kasugai, JP;
Narumasa Soejima, Seto, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Abstract
A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×10cm. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.