The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Aug. 20, 2009
Masahiro Sugimoto, Toyota, JP;
Hiroyuki Ueda, Kasugai, JP;
Tsutomu Uesugi, Seto, JP;
Masakazu Kanechika, Aichi-ken, JP;
Tetsu Kachi, Nisshin, JP;
Masahiro Sugimoto, Toyota, JP;
Hiroyuki Ueda, Kasugai, JP;
Tsutomu Uesugi, Seto, JP;
Masakazu Kanechika, Aichi-ken, JP;
Tetsu Kachi, Nisshin, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Abstract
A nitride semiconductor devicecomprises a nitride semiconductor layer. A gate insulating filmis formed on the surface of the nitride semiconductor layer. The gate insulating filmincludes a portion composed of an aluminum nitride filmand a portion composed of an insulating materialthat contains at least one of oxygen or silicon. A region Wof the nitride semiconductor layerfacing the aluminum nitride filmis included in a region Wof the nitride semiconductor layerfacing a gate electrode. The nitride semiconductor devicemay further comprise a nitride semiconductor lower layer. The nitride semiconductor layermay be stacked on the surface of the nitride semiconductor lower layer. The nitride semiconductor layermay have a larger band gap than that of the nitride semiconductor lower layerand have a heterojunction formed there between.